The Metal Oxide Semiconductor Field Effect Transistor (MOSFET) builds upon the basic FET by adding a layer of silicon dioxide as illustrated schematically below. It achieves extremely high input impedance, in the range 10⁹ to 10¹⁴ ohms.

The Metal Oxide Semiconductor Field Effect Transistor (MOSFET) builds upon the basic FET by adding a layer of silicon dioxide (see illustration). It achieves extremely high input impedance, in the range 10⁹ to 10¹⁴ ohms.

The Metal Oxide Semiconductor Field Effect Transistor (MOSFET) builds upon the basic FET by adding a layer of silicon dioxide (see illustration). It achieves extremely high input impedance, in the range 10⁹ to 10¹⁴ ohms.